High resolution recording medium and method for producing same
AssigneeDr. Johannes Heidenhain GmbH
InventorLeopold Hiesinger
Life of this patent
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Abstract
A high resolution recording medium is provided which employs at least two layers of inorganic material which act as filters for two different colors of visible light. In one embodiment, microphoto lithography techniques are used to create microinterference filters in the desired patterns on a glass substrate. Recording media constructed according to this invention exhibit increased stability with respect to time and improved resistance to light and heat damage as compared with prior art recording media employing organic dyes.
Claims27
A method for producing a high resolution recording medium on a substrate, comprising the following steps:
- (a) applying at least one reflecting layer of an inorganic material to a surface of the substrate;
- (b) applying a photoresist material to the reflecting layer;
- (c) exposing a patterned portion of the photoresist material by means of an exposure mask;
- (d) developing the photoresist material;
- (e) removing at least a portion of the reflecting layer not covered with photoresist material;
- (f) removing the remaining photoresist material;
- (g) applying a substantially uniformly thick interference layer of a translucent inorganic material to the surface of the substrate and the remaining reflecting layer;
- (h) applying at least one additional reflecting layer of an inorganic material to the interference layer;
- (i) applying a photoresist material to the additional reflecting layer;
- (j) exposing a patterned portion of the photoresist material by means of an exposure mask;
- (k) developing the photoresist material;
- (l) removing the portion of the additional reflecting layer not covered with photoresist material;
- and
- (m) removing the remaining photoresist material.
A method for producing a high resolution recording medium on a substrate, said method comprising the following steps:
- (a)applying at least one first reflecting layer of a high refraction, translucent, inorganic material to a surface of the substrate;
- (b) removing a patterned portion of the reflecting layer applied in the preceding step by first applying a photoresist material to the layer applied in the preceding step, then exposing a patterned portion of the photoresist material by means of an exposure mask, then developing the photoresist material, then removing at least a portion of the layer applied in the preceding step not covered with photoresist material, and then removing the remaining photoresist material;
- (c) applying at least one second reflecting layer of a low refraction, translucent, inorganic material to the surface of the substrate and the remaining first reflecting layer, and then repeating step (b) above to remove a patterned portion of the second reflecting layer;
- (d) applying at least one third reflecting layer of a high refraction, translucent, inorganic material to the surface of the substrate and the remaining second reflecting layer, and then repeating step (b) above to remove a patterned portion of the third reflecting layer such that at least a portion of the low refraction second reflecting layer is interposed between the high refraction first reflecting layer and the high refraction third reflecting layer;
- (e) applying a substantially uniformly thick interference layer of a translucent inorganic material to the surface of the substrate and the remaining reflecting layer;
- (f) applying at least one fourth reflecting layer of a high refraction, translucent, inorganic material to at least a portion of the interference layer;
- (g) removing a patterned portion of the reflecting layer applied in the preceding step by first applying a photoresist material to the layer applied in the preceding step, then exposing a patterned portion of the photoresist material by means of an exposure mask, then developing the photoresist material, then removing at least a portion of the layer applied in the preceding step not covered with photoresist material, and then removing the remaining photoresist material;
- (h) applying at least one fifth reflecting layer of a low refraction, translucent, inorganic material to at least a portion of the interference layer and the remaining fourth reflecting layer, and then repeating step (g) above to remove a patterned portion of the fifth reflecting layer;
- and
- (i) applying at least one sixth reflecting layer of a high refraction, translucent, inorganic material to at least a portion of the interference layer and the remaining fifth reflecting layer, and then repeating step (g) above to remove a patterned portion of the sixth reflecting layer such that at least a portion of the low refraction fifth reflecting layer is interposed between the high refraction fourth reflecting layer and the high refraction sixth reflecting layer.
Dependencies are inferred from the claim text.