Method for the production of a disk-shaped silicon semiconductor component with negative beveling

A method for the production of a disk-shaped silicon semi-conductor component with at least two adjoining zones of opposite type conductivity and different doping strengths using a lapping disk which comprises:

• positioning the semiconductor disk adjacent the lapping disk;
• subjecting the semiconductor disk to a suction pressure on its side opposite the lapping disk so as to be bowed up from an initial lapping plane with a radius of curvature corresponding to a desired angle;
• rotating said lapping disk;
• lapping said semiconductor disk with said rotating lapping disk at a shallow angle of orientation such that the cross section of the semiconductor disk is smaller on the more highly doped side than on the side with lower doping;
• and
• beveling off the bounding surface of the semiconductor disk opposite the plane of the junction separating the two zones into the region of the junction separating the two zones.