US 4,242,692 AGranted

Charge transfer device which has a pair of straight portions joined by a direction changing portion

AssigneeSony Corporation

InventorYoshiaki Hagiwara

Life of this patent

Estimating the term…

Loading patent…

Abstract

The present invention relates to a charge transfer device which allows change of the charge transfer direction wherein transfer portions are formed of generally rectangular shape which have a length in the charge transfer direction which gradually gets longer to the transition direction change area and widths which get smaller relative to the direction transverse to the charge transfer direction. The length times width of the transfer portions is made substantially constant. The feature providing that the transfer regions become narrower as they approach the portion of charge direction change allows the charge direction change to be relatively shorter than apparatus of the prior art thus resulting in greater efficiency, shorter charge transfer time, eliminates the requirement for direct current bias and a more integrated device is provided.

Claims15

Dependent claims

An electrical charge transfer device comprising, a semiconductor substrate having a plurality of aligned charge transfer regions and storage regions, a direction changing portion located between two of said charge transfer regions to change the charge transfer direction and wherein the charge transfer direction in at least one of said two charge transfer regions is toward said direction changing portion, a plurality of electrodes associated with said storage, transfer and direction changing regions, means for applying potentials to said electrodes, a channel stopper region having a different conductivity than said charge transfer and storage regions, defining the borders of said transfer and storage regions provided commonly to said plurality of charge transfer and storage regions and having a shape such that asymmetrical potential wells are formed in the respective charge transfer regions in the charge transfer direction, said asymmetrical potential wells and said applied potentials being effective to cause charge transfers to said storage regions each of said storage regions having length dimensions in the charge transfer direction and width dimensions in the direction transverse to the charge transfer direction and wherein the lengths of said storage regions become progressively longer and the widths become progressively shorter as said storage regions become closer spaced to said direction changing portion.

Dependencies are inferred from the claim text.