US 4,235,857 A · Method of nitriding silicon

Abstract

A method of manufacturing silicon nitride particles, either in an aglomerated or unaglomerated form, is disclosed. Basically, the particles to be nitrided are placed in an enclosed furnace and heated to a suitable temperature at which the enclosed furnace is filled with an initial gaseous mixture of nitrogen and hydrogen, the mixture containing not more than about 6% by volume hydrogen. Thereafter, the material is heated in the enclosed furnace to a temperature of about 900.degree. C. to about 1000.degree. C. at which time the nitrogen starts to react with the silicon in the furnace. Thereafter, the enclosed furnace is demand filled with a nitriding gas mixture consisting essentially of 1 to 10% by volume helium and about 99 to 90% by volume nitrogen. The furnace is heated to a suitable nitriding temperature and the demand filling of the chamber with the nitriding gas helium/nitrogen combination is continued until the nitriding operation is terminated. The enclosed furnace is then cooled to room temperature and the nitrided silicon material recovered. The use of helium in the nitriding gas obtained all of the benefits one obtains when nitriding gas is a combination of hydrogen and nitrogen, but does not produce an explosive mixture.

Claims6

Dependent claims

A method of nitriding silicon particles which comprises the steps of:

placing the silicon particles to be nitrided in an enclosed furnace;
filling said enclosed furnace with an initial gaseous mixture of nitrogen and hydrogen, said mixture containing not more than about 6% by volume hydrogen;
heating said enclosed furnace with said gaseous mixture therein to a temperature in a range from about 900.degree. C. to about 1000.degree. C.;
demand filling said enclosed furnace after it has been heated to said temperature in the range from about 900.degree. C. to about 1000.degree. C. with a nitriding gas mixture consisting essentially of about 1 to 10% by volume helium and about 99 to 90% by volume nitrogen;
continue heating said enclosed furnace to a reaction temperature below the melting temperature of silicon;
continue demand filling of said enclosed furnace with said helium/nitrogen gas combination until the nitriding operation is terminated;
cooling the enclosed furnace to room temperature;
and
recovering the nitrided silicon material from the enclosed furnace said nitrided silicon material exhibiting a greater strength than a nitrided silicon material prepared according to said method wherein argon is used in place of helium.

6 more elements

Dependencies are inferred from the claim text.

Method of nitriding silicon

Life of this patent

Method of nitriding silicon

Life of this patent

Abstract

Claims6