Ladder device with weighting factor adjusting means
AssigneeU.S. Philips Corporation
InventorsLeonard J. M. Esser, Ludovicus G. M. Heldens
Life of this patent
Estimating the term…
Abstract
A ladder device comprising at least three ladder sections connected in cascade and weighting-factor adjusting means coupled to said ladder sections and which comprises first and second field effect transistors (FET) having channel regions with different predetermined length/width ratios that define a weighting factor coefficient. A further fine adjustment of the weighting factor is achieved by adjusting the gate voltages of the FETs.
Claims6
A ladder device comprising at least three ladder sections each having an input and an output, first means for coupling said ladder sections in cascade via said inputs and outputs, second means for coupling a signal input terminal to at least one input of said ladder sections, a signal output terminal coupled to an output of at least one ladder section, weighting-factor adjusting means coupled to an input of at least one ladder section, said weighting-factor adjusting means comprising first and second field-effect transistors each having a main electrode connected to said input of said one ladder section, the channel regions of said first and second transistors having mutually different predetermined length-to-width ratios defining a selected weighting factor coefficient, both of said transistors being integrated in the same semiconductor body, and means for adjusting the gate voltages of said first and second field-effect transistors as a voltage difference so as to provide a further fine adjustment of the weighting factor.
A ladder device comprising at least three ladder sections connected in cascade with each ladder section having an input and an output, a coupling from a signal input terminal to an input of a ladder section, means coupling the outputs of a plurality of said ladder sections to a signal output terminal, said coupling means including weighting-factor adjusting means comprising first and second field-effect transistors each having a main electrode connected in common to an output of one of said ladder sections, the channel regions of said first and second transistors having mutually different length-to-width ratios defining a desired weighting factor coefficient, both of said transistors being integrated in the same semiconductor body, and means for adjusting the gate voltages of said first and second field-effect transistors to provide a fine adjustment of the weighting factor.
Dependencies are inferred from the claim text.