Solid state image pickup device with suppressed so-called blooming phenomenon

Abstract

A solid state image pickup device includes a matrix array of pn-junction type photo-diodes formed in a monolithic semiconductor substrate, vertical switching FET's of MOS type each connected to the associated photo diode for reading out electric charge stored therein, a vertical shift register for supplying control pulses to gate terminals of the vertical switching MOS FET's, vertical output conductors each for connecting together those of the vertical switching MOS FET's arrayed in the same rows, horizontal switching MOS FET's for horizontal read out connected to the other end of the vertical output conductors, a horizontal shift register for supplying control pulses to gate terminals of the horizontal switching MOS FET's and a horizontal output conductor connecting in common the outputs of the horizontal switching MOS FET's. The image pickup device further comprises means for varying the potential at the grounded terminal of the vertical shift register during the horizontal blanking period, and a group of MOS type FET switches connected to the other ends of the vertical output conductors, whereby surplus electric charge at the photo-diodes, if any, is removed through the MOS FET switches during the horizontal blanking period.

Dependencies are inferred from the claim text.