Light emitting diode
AssigneeRCA Corporation
InventorsDan Botez, Michael Ettenberg, Henry Kressel
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Abstract
A light emitting diode includes a substrate having a body of single crystalline semiconductor material, preferably a Group III-V compound or alloy thereof, on a surface of the substrate. The body includes a window layer directly on the substrate and one or more other layers on the window layer. The layers of the body are of appropriate conductivety types to form a recombination region in which light can be generated. The substrate has an opening therethrough to the window layer. The window layer is of a material which is substantially transparent to the light generated in the recombination region and is of a thickness, 15 to 30 microns, to provide rigidity to the diode.
Claims6
A light emitting semiconductor device comprising
- a body of semiconductor material on a substrate of a semiconductor material, said body including a window layer adjacent to said substrate, and layers of opposite conductivity type on said window layer with the layer adjacent said window layer being a recombination region in which light can be generated, said window layer being of a material which is transparent to said generated light and having a thickness of between 15 and 30 microns, and
- said substrate having an opening therethrough to said window layer.
Dependencies are inferred from the claim text.