Compound semiconductor wafer
AssigneeFutaba Denshi Kogyo K.K.
InventorKiyoshi Morimoto
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Abstract
A compound semiconductor wafer having a substrate of a IV-group element semiconductor of a predetermined conductivity type, an epitaxial layer formed by epitaxially growing on the substrate a compound semiconductor having the same conductivity type as the substrate by an ion beam deposition process or a cluster ion beam deposition process, and a compound semiconductor layer of a conductivity type opposite to that of the epitaxial layer and formed on the epitaxial layer so as to form a PN junction with the epitaxial layer.
Claims12
A compound semiconductor wafer comprising a substrate of a IV-group element semiconductor having a predetermined conductivity type, an epitaxial layer formed by epitaxially growing on said substrate a compound semiconductor having the same conductivity type as the substrate by an ion beam deposition process or a cluster ion beam process, said compound semiconductor being selected from a group of compound semiconductors comprising both binary and ternary III-V semiconductor compounds;
- and a compound semiconductor layer having a conductivity type opposite to that of said epitaxial layer and formed on said epitaxial layer so as to form a PN junction with said epitaxial layer.
A compound semiconductor wafer comprising a substrate of a IV-group element semiconductor having a predetermined conductivity type, an intermediate layer formed by making impinge on said substrate a compound semiconductor having the same conductivity type as said substrate by an ion beam deposition process or a cluster ion beam deposition process so that it contains the component element of said substrate and the component elements of said compound semiconductor mixedly, said intermediate layer being a ternary semiconductor compound mixedly containing silicon, gallium and phosphorus;
- an epitaxial layer of said compound semiconductor having the same conductivity type as said substrate, said epitaxial layer being formed by epitaxially growing said compound semiconductor on said intermediate layer by continuing said ion beam deposition process or said cluster ion beam deposition process, and a compound semiconductor layer having a conductivity type opposite to that of said epitaxial layer and formed on said epitaxial layer so as to form a PN junction therewith.
A compound semiconductor wafer comprising a substrate of a IV-group element semiconductor having a predetermined conductivity type, an intermediate layer formed by making impinge on said substrate a compound semiconductor having the same conductivity type as said substrate by an ion beam deposition process or a cluster ion beam deposition process so that it contains the component element of said substrate and the component elements of said compound semiconductor mixedly, an epitaxial layer of said compound semiconductor having the same conductivity type as said substrate, said epitaxial layer being formed by epitaxially growing said compound semiconductor on said intermediate layer by continuing said ion beam deposition process or said cluster ion beam deposition process, said compound semiconductor being selected from a group including both binary and ternary III-V semiconductor compounds;
- and a compound semiconductor layer having a conductivity type opposite to that of said epitaxial layer and formed on said epitaxial layer so as to form a PN junction therewith.
Dependencies are inferred from the claim text.