Charge injection device opto-electronic sensor

Abstract

An opto-electronic sensor has at least one light-permeable electrically insulating layer carried on a surface of a substrate of doped semiconductor material. The insulating layer carries a number of electrodes arranged in the form of a matrix of lines and columns in which at least one line is present with at least two electrodes. The electrodes belonging to a line are electrically interconnected with each other. A buried channel is present in the substrate below each column and is doped opposite to the doping of the substrate. Each buried channel is connected, by way of a respective on-off switch, to the input of a voltage amplifier whose input capacitance is smaller than the capacitance of each individual buried channel and whose input resistance is so great that the time constant determined by the input resistance and the capacitance of a buried channel is greater than 10 nsec. The input of the voltage amplifier is electrically connected to an external terminal contact by way of at least one additional on-off switch.

Dependencies are inferred from the claim text.