Processes for deposition of thin films of crystalline silicon on graphite
AssigneeProduits Chimiques Ugine Kuhlmann
InventorsJean Ricard, Charles Excoffon
Life of this patent
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Abstract
Processes for the continuous deposition of crystalline silicon on graphite substrates, the silicon being undoped or N- or P-doped and the substrates being useful for photovoltaic cells and other electronic devices, the processes comprising placing crystalline silicon in at least one crucible having a capillary port with a vertical axis in its lower part; bringing the silicon to its melting point; bringing a graphite substrate into contact with the pendant drop formed at the lower mouth of the capillary; moving the substrate at a selected speed in a constant predetermined direction; and removing the substrate coated with the crystalline substance at chosen time intervals.
Claims10
A process for providing crystalline silicon coatings on graphite substrates, which process comprises maintaining molten silicon material in a crucible having in its lower region a capillary conduit with a substantially vertical axis, the length of the capillary being at least equal to the retention height of the molten silicon material in the capillary to form a pendant drop at the bottom of the capillary;
- bringing a graphite substrate into contact with the drop of molten silicon material formed at the bottom of the capillary;
- moving the substrate at a selected speed in a direction which is at an angle of from 0.degree. to about 60.degree. with the horizontal, whereby molten silicon material flows downwardly through the capillary onto the substrate to form a thin film thereon;
- and periodically removing the crystalline silicon-coated substrate so formed.
Dependencies are inferred from the claim text.