Chemically sensitive field effect transistor having electrode connections

In a chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), wherein a semiconductor body of a first conduction type, and having a front face and a rear face on opposite sides thereof, is provided with two diffusion zones, a source diffusion zone and a drain diffusion zone, which are spaced apart on and extend to a determined depth from said front face and which are formed of a second conduction type with opposite polarity to the first conduction type, and wherein said diffusion zones bound a channel and are connected to conductor paths which contact connection lines, said transistor having a stabilization layer on said front face, a chemically sensitive layer on said front face, and additional stabilization layers, particularly on the edges thereof, the improvement comprising:

• said conductor paths connected to said diffusion zones formed of highly doped regions of the second conduction type;
• and
• a pair of connection zones respectively connected to said diffusion zones through said conductor paths, said connection zones laterally offset relative to said diffusion zones and extending through said semiconductor body from the front face to the rear face thereof, said connection lines contacting said connection zones at said rear face;
• whereby said connection lines are connected to said diffusion zones through said connection zones and said conduction paths.