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US 4,232,280 AGranted
Network for simulating low temperature resistors
AssigneeHughes Aircraft Company
InventorRobert L. Forward
Life of this patent
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Abstract
A class of two-terminal active networks which simulate low-noise temperature resistors is disclosed. A single field effect transistor or other suitable amplifier comprises the active element of the network. A dual transformer feedback arrangement or a single transformer feedback arrangement comprises the remainder of the circuit. Either positive or negative simulated resistors can be obtained with a wide range of equivalent resistance values and effective noise temperatures.
Claims6
A two-terminal network for simulating a resistance comprising:
- at least one transformer having a first and second winding;
- a field effect transistor having at least a source, drain and gate electrodes;
- first means for coupling one of said network terminals to one side of said first winding of said transformer;
- second means for coupling the other side of said first winding of said transformer to the other of said network terminals;
- third means for coupling said source and gate electrodes of said field effect transistor across said second winding of said transformer;
- and
- fourth means for coupling said drain electrode of said field effect transistor to said one side of said first winding of said transformer.
4 more elements
A two-terminal network for simulating a resistance comprising:
- a first transformer having an input and output winding and an input-to-output turns ratio of 1/n;
- a second transformer having an input and output winding and an input-to-output turns ratio of m;
- a field effect transistor having at least a source, drain and gate electrodes;
- first means for coupling said input winding of said first transformer in parallel to said output winding of said second transformer to form said network terminals.
- second means for coupling said secondary of said first transformer between said source and gate electrodes of said field effect transistor;
- third means for coupling one side of said primary of said second transformer to said drain electrode of said field effect transistor;
- and
- fourth means for applying a DC biasing potential to said other side of said primary winding of said second transformer.
5 more elements
Dependencies are inferred from the claim text.