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US 4,232,057 AGranted
Semiconductor plasma oxidation
AssigneeInternational Business Machines Corporation
InventorsAsit K. Ray, Arnold Reisman
Life of this patent
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Abstract
Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.
Claims4
The process of linear plasma oxide growth on semiconductor substrates comprising in combination the steps of:
- providing a container having a separated plasma generation location and an oxide growth location,
- maintaining in said container an oxygen ambient at a pressure in a range of less than 40 millitorr,
- applying power external to said container adjacent to said plasma generation location sufficient to form a plasma of said oxygen, and
- maintaining a substrate temperature in the range of 300.degree. to 800.degree. C. with a temperature source external to said container adjacent to said oxide growth location.
1 more element
Dependencies are inferred from the claim text.