Serriform strip crosstie memory

In a logic system, a crosstie memory element, comprising an oblongly ferromagnetic layer, longitudinally bounded by a pair of mirror image denticulated margins parallel to and symmetric about the centerline of the layer, each margin formed by an equal plurality of opposite, equally spaced abutting denticles, each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon the centerline exceeds the projected length of its minor edge upon the same centerline.

A serially accessible memory element for the storage and propagation of crosstie-Bloch line pairs, comprising:

• a ferromagnetic strip bordered along each of its oblong edges by a plurality of uniformily oriented denticles arranged in a spaced relation to those denticles bordering the opposite edge, each denticle described by a first chord of length A having a projecting end meeting one end of a second chord of length B and a recessed end potentially intersecting the centerline of the strip at an angle .theta., the unmet end of the second chord potentially intersecting the centerline of the strip at an angle .phi.,
• wherein:
• A.multidot.SINE 2.theta.>B.multidot.SINE 2 .phi..

In a crosstie memory system of the type using an oblongly detate ferromagnetic layer with oppositely directed induced magnetic domains separated by a domain wall running along its length, and with opposite denticles defining individual memory cells, the layer overlain with and electrically insulated from a single electrical conductor for applying magnetic field patterns along the length of the layer, the process of propagating along the domain wall binary information represented by the presence of crosstie-Bloch line pairs, comprising the steps of:

• applying via said single conductor a magnetic propagation pulse in a negative direction perpendicular to the centerline of said layer whereby for each existing crosstie-Bloch line pair the Bloch line is propelled into the next memory cell;
• applying via said single conductor a magnetic annihilation pulse having a magnitude sufficient to propel each last nucleated Bloch line to the position occupied by the nearest previously existing crosstie but of magnitude insufficient to propel any pre-existing Bloch line to the position occupied by the last nucleated crosstie, in a positive direction perpendicular to the easy axes of said layer.

A serially accessible memory element for the storage and propagation of crosstie-Bloch line pairs, comprising:

• a ferromagnetic strip bordered along each of its edges by a plurality of uniformily oriented denticles arranged in a spaced relation to those denticles bordering the opposite edge, each denticle described by a first chord of length A having a projecting end meeting one end of a second chord of length B and a recessed end potentially intersecting a third chord at the centerline of the strip with an angle .theta., the unmet end of the second chord potentially intersecting the third chord at the centerline of the strip with an angle .phi.,
• wherein:
• A.multidot.SINE 2.theta.>B.multidot.SINE 2 .phi..

A serially accessible memory element, comprising:

• a thin-film ferromagnetic layer of uniform thickness having opposed, symmetrically disposed serriform margins;
• each margin formed by a plurality of denticles;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

A serially accessible memory comprising:

• a ferromagnetic layer of uniform thickness less than one thousand angstrom units and having a pair of opposed, unidirectionally oriented, serriform margins;
• each margin formed by a plurality of denticles;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

A serially accessible memory element for storage and propagation of binary information, comprising:

• an oblongly ferromagnetic layer of uniform thickness having denticulation on opposed margins formed by a plurality of asymmetric denticles unidirectionally oriented along the direction of propagation;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

The memory element set forth in 49 claim further comprised of the denticles in each margin spaced apart.

A serially accessible binary memory, comprising:

• a ferromagnetic strip of uniform thickness having unidirectionally oriented denticulation along a pair of opposed margins;
• the denticulation formed by a plurality of denticles;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

A serially accessible crosstie memory element, comprising:

• a magnetically isotropic thin-film ferromagnetic strip of uniform thickness with opposed unidirectionally oriented serriform margins, capable of sustaining a domain wall along its length for the storage and propagation of crosstie--Bloch line pairs;
• each margin formed by a plurality of denticles;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

A crosstie memory element, comprising:

• a magnetically isotropic, ferromagnetic strip of uniform thickness defining a serially accessible data-track along its length for the storage and propagation of crosstie-Bloch line pairs including opposing margins each formed of a plurality of denticles, each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.

A crosstie memory element, comprising:

• a ferromagnetic layer of uniform thickness not greater than one thousand angstrom units, having opposed, unidirectionally oriented, serriform margins defining a serially accessible data-track along its length for the storage and propagation of crosstie-Bloch line pairs;
• each margin formed by a plurality of denticles;
• each denticle having a major edge intersecting a minor edge wherein for each denticle the projected length of its major edge upon an imaginary centerline disposed between the opposed margins exceeds the projected length of its minor edge upon the same centerline.