Tungsten-titanium-chromium/gold semiconductor metallization
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorK. Reed Gleason
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Abstract
Improved TRAPATT diodes in which the improvement comprises a high-temperae metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped (mesa or ring structure) TRAPATT diodes. Such diodes can withstand 610.degree. C. for one hour without degradation.
Claims6
An improved diode in which the improvement comprises:
- a metallization layer of an alloy of chromium, titanium and tungsten on silicon followed by a layer of gold.
Dependencies are inferred from the claim text.