Programmable memory cell having semiconductor diodes

An integrated electrically programmable read only memory cell having at least a first and a second semiconductor diode in back-to-back arrangement, wherein

• the first diode is a planar p-n junction formed between two superimposed regions of which at least one region extends on the upper part of a semiconductor body and the second diode is a lateral p-n junction formed between two co-planar zones of a thin layer of a semiconductor material extending locally on an insulating layer covering the said body;
• a window in the said insulating layer ensuring a contact between the said layer and the said body at the site of the first diode, and
• the area of the junction of the second diode being substantially smaller than that of the first.