Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor

A temperature compensated integrated circuit semiconductor resistor, comprising:

• an epitaxial semiconductor layer of a first conductivity type having a resistor of a second conductivity type disposed therein;
• temperature sensing means having a voltage output terminal connected to said epitaxial layer;
• said temperature sensing means having a voltage output characteristic with respect to temperature which varies inversely with respect to the temperature coefficient of resistance of said resistor;
• variations in the resistance of the resistor due to temperature changes being compensated for by corresponding changes in voltage of the epitaxial layer induced by said temperature sensing means.

A plurality of temperature compensated integrated circuit semiconductor resistors, comprising:

• a plurality of resistor regions of a second conductivity type formed in an epitaxial semiconductor layer of a first conductivity type, each having electrical contacts on opposing ends, one of said contacts being connected to a reference potential;
• said resistors having a positive voltage coefficient of resistance and a predetermined temperature coefficient;
• temperature sensing means formed in proximity to said resistors on said integrated circuit, having a voltage output terminal connected to said epitaxial layer and a second terminal connected to said reference potential;
• said temperature sensing means having, on said voltage output terminal, a voltage output characteristic with respect to temperature which varies inversely with respect to the temperature coefficient of resistance of said resistors;
• variations in the resistance of the resistors due to temperature changes being compensated for by corresponding changes in the voltage of the epitaxial layer induced by said temperature sensing means.