Low-resistivity polycrystalline silicon film
AssigneeRCA Corporation
InventorsChung P. Wu, Ronald K. Smeltzer
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Abstract
A method of fabricating a low-resistivity polycrystalline silicon film deposited on a substrate comprises the steps of doping the polycrystalline silicon film with boron in situ while depositing the film, to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3, and then irradiating the film with a laser pulse. The present method may be utilized to fabricate a polycrystalline silicon film having a relatively small temperature coefficient of resistivity by electrically connecting a first irradiated part of the film with a second non-irradiated part in a manner allowing the two parts, having different temperature coefficients of resistivity, to compensate each other.
Claims11
In a method of fabricating a low-resistivity polycrystalline silicon film including the step of depositing said film on a substrate, the improvement in said method comprising the steps of:
- doping said polycrystalline silicon film with boron in situ during said depositing step to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3 and then
- irradiating said film with a laser pulse.
In a method of fabricating a polycrystalline silicon film having a relatively small temperature coefficient of resistivity, including the step of depositing said film on a substrate, the improvement in said method comprising the steps of:
- doping said polycrystalline silicon film with boron in situ during said depositing step to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3,
- irradiating a first part of said doped film with a laser pulse, and
- electrically connecting said first part of said film with a second nonirradiated part of said film in a manner allowing the two parts, having different temperature coefficients of resistivity, to compensate each other.
Dependencies are inferred from the claim text.