Method of fabrication of semiconductor components having optoelectronic conversion properties
AssigneeCommissariat a l'Energie Atomique
InventorsDaniel Bensahel, Jean-Claude Pfister, Louis Revoil
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Abstract
The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness, a metallic contact being finally formed on each face of the wafer.
Claims14
A method of fabrication of a semiconductor component having optoelectronic conversion properties, wherein said method comprises the following steps:
- (a) there is employed at the outset a wafer of p-type ZnTe semiconductor material;
- (b) the top surface of said wafer is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness;
- and
- (c) a metallic contact is formed on both faces of said wafer.
A method of fabrication of a semiconductor component having eletroluminescent and photodetecting properties, wherein said method comprises the following steps:
- (a) there is employed at the outset a wafer of p-type ZnTe semiconductor material;
- (b) a layer of aluminum is deposited on the top face of said wafer;
- (c) a layer of LiNO.sub.3 is deposited on the top face of the aluminum layer;
- (d) the complete assembly is heated so as to obtain double diffusion of the aluminum and of the lithium;
- and
- (e) a second electrode is deposited on the bottom face of the wafer.
A method of fabrication of a semiconductor component having electroluminesecent and photodetecting properties, wherein said method comprises the following steps:
- (a) aluminum-lithium alloy is formed;
- (b) a layer of alloy is deposited on the top face of a wafer of p-type ZnTe semiconductor material;
- (c) the complete assembly is heated so as to obtain double diffusion of the aluminum and of the lithium;
- and
- (d) a second electrode is deposited on the bottom face of the wafer.
Dependencies are inferred from the claim text.