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US 4,229,233 AGranted
Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching
AssigneeInternational Business Machines Corporation
InventorsThomas A. Hansen, Claude Johnson, Jr., Robert R. Wilbarg
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Abstract
A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.
Claims6
A method for texturing a silicon substrate to provide an anti-reflective surface thereon comprising the step of:
- reactive ion etching the surface of said substrate, in the absence of an etch mask on said surface, in a reactive ion etching chamber which contains a chemically active gaseous species which combines with said silicon to form a volatile species such that said surface is subjected to both physical sputtering as well as a chemical reaction with the gaseous species,
- said etching taking place for a sufficient time to texture said silicon surface.
Dependencies are inferred from the claim text.