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US 4,228,455 AGranted
Gallium phosphide semiconductor device having improved electrodes
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsNobuaki Yasuda, Takenobu Ogawa, Tetsuo Sadamasa
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Abstract
A gallium phosphide semiconductor device comprising an N type gallium phosphide monocrystal, a semiconductor layer formed in or on the monocrystal, and a pair of electrodes formed on the monocrystal and on the semiconductor layer. The electrode on the monocrystal is made of a gold-germanium alloy having a predetermined germanium content.
Claims10
A gallium phosphide semiconductor device comprising:
- an N type gallium phosphide monocrystal;
- a semiconductor layer formed in or on the monocrystal;
- and
- a pair of electrodes forming an ohmic contact, formed on a surface of the monocrystal and on a surface of the semiconductor layer, said electrode on the monocrystal surface being made of a film of a gold-germanium alloy containing germanium in a concentration ranging from the upper limit at which germanium forms a solid solution with gold at room temperature to the upper limit at which germanium forms a solid solution with gold at the eutectic temperature of the alloy.
1 more element
Dependencies are inferred from the claim text.