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US 4,228,452 AGranted
Silicon device with uniformly thick polysilicon
AssigneeEastman Kodak Company
InventorsDavid L. Losee, Alvin D. Wilder
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Abstract
Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.
Claims1
A semiconductor optical imaging device comprising:
- (a) a chip of bulk silicon;
- (b) a silicon dioxide coating on one surface of said chip;
- and
- (c) doped vacuum deposited polysilicon having a reference thickness and overlaying said silicon dioxide coating, the thickness of said doped polysilicon being uniform, and variations in said uniformity being to within 20 A of said reference thickness for said doped polysilicon.
1 more element
Dependencies are inferred from the claim text.