Buried high sheet resistance structure for high density integrated circuits with reach through contacts

An integrated circuit structure comprising:

• silicon regions separated from like silicon regions by a dielectric barrier surrounding each of said regions;
• each of said silicon regions including a base region of a first conductivity, a second region over said base region of a second conductivity, a third region of said first conductivity buried within said second region so as to form electrically and physically separated upper and lower regions in said second region;
• and a reach-through region of said first conductivity connecting the surface of the silicon regions with said third region;
• means for electrically contacting said base, second upper, second lower and reach-through regions in said silicon regions to perform a desired circuit function;
• and
• said means for electrically connecting is so connected that a resistor is located in certain of said silicon regions, said resistor formed in said lower region of a second conductivity located below said third buried region of a first conductivity, said means for electrically contacting said lower region including reach-through regions of a second conductivity from the surface of said silicon region to said lower region of a second conductivity and electrical contacts thereto.