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US 4,228,212 AGranted
Composite conductive structures in integrated circuits
AssigneeGeneral Electric Company
InventorsDale M. Brown, Marvin Garfinkel
Life of this patent
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Abstract
A composite conductive structure in integrated circuit devices is described. The composite conductive structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide. A layer of a silicide of the refractory metal covers the conductor and a layer of silicon dioxide covers the layer of the silicide. A method of making such structures is also described.
Claims11
In combination,
- a substrate of semiconductor material having a major surface,
- a layer of insulating material overlying said major surface,
- a conductor of a refractory metallic material which is substantially non-reactive with silicon dioxide overlying said insulating layer,
- a layer of a silicide of said metallic material overlying the exposed surfaces of said conductor,
- a layer of silicon dioxide overlying the exposed surfaces of said layer of said silicide.
2 more elements
Dependencies are inferred from the claim text.