Process for producing diamond-like carbon
OwnerCressie E. Holcombe, Jr., James B. Condon +1inventors
InventorsCressie E. Holcombe, Jr., James B. Condon, D. H. Johnson
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OwnerCressie E. Holcombe, Jr., James B. Condon +1inventors
InventorsCressie E. Holcombe, Jr., James B. Condon, D. H. Johnson
Estimating the term…
A process is described for the production of dense metastable phases of carbon which have characteristics similar to diamond. Particulates of the metastable carbon are produced by reacting silicon carbide or a silicon carbide precursor, such as a silane or silicon metal, with a fluorocarbon, such as carbon tetrafluoride at a temperature greater than about 800.degree. C. A preferred range is from about 900.degree. C. to 1200.degree. C. The reaction may be carried out in a high voltage electrical diacharge, or other plasma, or in a furnace. The presence of a "promoter" metal, such as nickel and iron, increases the reaction rate and the quantity of the metastable carbon phases. Relatively large quantities of these diamond-like particulates are produced, and their properties are such as to make them useful for many of the same applications for which commercial diamonds are utilized. They are also useful in numerous high temperature applications. Layers of the metastable carbon phases may be applied to substrates to produce hard and impermeable surfaces thereby producing cutting elements, styli, etc.
A process for producing metastable carbon phases which comprises reacting a fluorocarbon with silicon carbide or a precursor of silicon carbide at a temperature of above about 800.degree. C.
A process for producing metastable carbon phases which comprises reacting silicon carbide and carbon tetrafluoride at a temperature between about 800.degree. and 1200.degree. C.
A process for producing metastable carbon phases which comprises heating a mixture of methyltrichlorosilane and carbon tetrafluoride at a temperature greater than about 800.degree. C.
A process for producing a film of metastable carbon phases on a substrate which comprises heating the substrate to above about 800.degree. C., flowing methyltrichlorosilane past the heated substrate forming a film of SiC upon the substrate, and then flowing carbon tetrafluoride past the heated film of SiC to react with the SiC and produce the film of the metastable carbon phases.
Dependencies are inferred from the claim text.