Process for forming a single-crystal film
AssigneeFutaba Denshi Kogyo K.K.
InventorToshinori Takagi
Life of this patent
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Abstract
A process for forming a thin single-crystal film comprising the steps of heating and vaporizing a film material in a closed type crucible to form vapor of the film material, injecting the vapor into a high vacuum region to form clusters of atoms of said vapor, ionizing said clusters by bombarding them with electrons to produce ionized clusters, accelerating the ionized clusters onto a cleavage plane of a substrate material to form a high-quality crystal film deposited thereon and oriented according to the crystal axis of the substrate material, and separating the crystal film by dissolving the substrate material in a solvent.
Claims5
A process for forming a thin single-crystal film comrising the steps of:
- heating and vaporizing a film material in a closed type crucible with at least one injection nozzle to form vapor of said material;
- injecting said vapor through said injection nozzle into a vacuum region the pressure of which is kept at 1/100 or less of the vapor pressure in said crucible and at about 10.sup.-2 Torr or less to adiabatically expand said vapor so as to attain a supercooled state and form clusters comprising atoms of said vapor;
- ionizing at least one atom forming said clusters by bombarding said clusters with electrons to produce ionized clusters;
- accelerating said ionized clusters by means of an electric field;
- permitting said accelerated clusters to collide with a cleavage plane of a substrate material easy to cleave and easy to dissolve in a solvent thereby forming a high-quality crystal film deposited thereon and oriented according to the crystal axis of said substrate material;
- and
- separating said crystal film by dissolving said substrate material in said solvent.
Dependencies are inferred from the claim text.