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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJames D. Jensen, Richard B. Schoolar
Estimating the term…
A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
A process for preparing from a lead-cadmium chalcogenide alloy having a first composition an epitaxial film having a second composition within a range including the first composition deposited upon an insulating substrate in a vacuum of at least 10.sup.-4 Torr, comprising:
A process for preparing from a lead-cadmium sulfide alloy having a first cadmium-sulfide mole fraction an epitaxial layer having a second cadmium-sulfide mole fraction within a range including the first mole fraction deposited upon an insulating crystalline substrate in a vacuum of at least 10.sup.-4 Torr, comprising:
A process for perparing from a Pb.sub.1-w Cd.sub.w S alloy, 0<w.ltoreq.0.15 having a first cadmium mole fraction, an epilayer having a second mole fraction w' within a range 0.ltoreq.w.ltoreq.0.15, deposited upon an insulating crystalline substrate of an alkali-halide in a vacuum of at least 10.sup.-4 Torr, comprising:
A process for controlling the cadmium-sulfide mole fraction of an epitaxial thin-film of Pb.sub.1-w Cd.sub.w S, 0.002.ltoreq.w.ltoreq.0.06, prepared by depositing a lead-cadmium sulfide alloy upon an insulating crystalline substrate in a vacuum of at least 10.sup.-4 Torr, comprising:
A process for preparing from a lead-cadmium-chalcogenide alloy having a first cadmium-chalcogenide mole fraction alayer having a second cadmium-chalcogenide mole fraction within a range including the first cadmium-chalcogenide mole fractiond eposited upon a surface of an alkali-halide substrate in a vacuum of at least 10.sup.-4 Torr, comprising:
Dependencies are inferred from the claim text.