Method for modifying the easy direction of magnetization of an amorphous magnetic film
AssigneesCommissariat a l'Energie Atomique, Agence Nationale de Valorisation de la Recherche (ANVAR)
InventorsHubert Jouve, Robert Meyer, Jacques Sztern, Ramanathan Krishnan, Gabor Suran, Michel Tessier
Life of this patent
Estimating the term…
Abstract
The easy direction of magnetization of an amorphous magnetic film is brought in the plane of the film by annealing this film in an oxygen-free atmosphere composed of a gas selected from the group comprising argon, neon, krypton and xenon at a temperature below the temperature of crystallization of the alloy which constitutes the film. The depth of penetration of the rare gas into the film is adjusted by modifying the parameters of annealing temperature and time in order to modify the easy direction of magnetization to a greater or lesser depth within the film.
Claims2
A method for modifying the easy direction of magnetization of an amorphous magnetic film of an alloy wherein annealing of said film is carried out in an oxygenfree atmosphere composed of a gas selected from the group consisting of argon, neon, krypton and xenon at a temperature below the temperature of crystallization of the alloy which forms said film, said alloy being in the form of a ribbon fabricated by ultra-rapid quenching from the molten alloy, the magnetic alloy being a transition metal and a metalloid of iron and boron and having the composition Fe.sub.80 B.sub.20.
An amorphous magnetic film constituted by a material which is an alloy of a ferromagnetic metal with a metalloid, wherein the easy axis of magnetization is located in the same plane as the film to at least part of the depth of said film, wherein the alloy is composed of iron and boron and corresponds to the formula Fe.sub.80 B.sub.20.
Dependencies are inferred from the claim text.