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US 4,227,943 AGranted
Schottky barrier solar cell
AssigneeRockwell International Corporation
InventorsMarshall J. Cohen, James S. Harris, Jr.
Life of this patent
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Abstract
A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr.sub.0.4).sub.x. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n.sup.+ -type conductivity GaAs substrate.
Claims7
A Schottky-barrier type solar cell comprising:
- an n-type conductivity semiconductor;
- an (SN).sub.x coating less than 300 A thick on a top surface of said semiconductor, said (SN).sub.x coating being doped with Br;
- and
- contact means for electrically contacting said semiconductor and said bromine doped (SN).sub.x coating.
1 more element
A Schottky-barrier type solar cell comprising:
- an N.sup.+ -type conductivity GaAs substrate;
- an n-type conductivity GaAs layer on a top surface of said substrate;
- an (SNBr.sub.0.4).sub.x coating less than 300 A thick on a top surface of said layer;
- and
- metal contacts on said substrate and on said coating.
2 more elements
Dependencies are inferred from the claim text.