Semiconductor device having a polycrystalline silicon diode

A semiconductor device comprising a monocrystalline silicon substrate, and a polycrystalline silicon layer including a first polycrystalline film of one conductivity type formed on a major surface of said monocrystalline silicon substrate and a second polycrystalline film of an opposite conductivity type formed on a surface of said first polycrystalline film so as to form a P-N junction between said first and second polycrystalline films, said first polycrystalline film containing a major impurity of said one conductivity type introduced thereinto from said major surface of said monocrystalline silicon substrate, said P-N junction being substantially parallel with said major surface of said monocrystalline silicon surface.

An integrated injection logic device comprising a semiconductor substrate of N conductivity type, an insulating film having an aperture formed on a major surface of said semiconductor substrate, first and second regions of P conductivity type selectively formed in said major surface of said semiconductor substrate, a third region of N conductivity type formed in said major surface within said second region, a polycrystalline layer formed on said major surface on said third region and within said aperture, a P-N junction being formed in said polycrystalline silicon layer in parallel with said major surface and adjacent to the side wall surface of said aperture at its end, a first electrode electrically connected to said semiconductor substrate, a second electrode electrically connected to said first region, a third electrode electrically connected to said second region, and a fourth electrode formed on a surface of said polycrystalline layer.