Circuit arrangement comprising a high-voltage power transistor

A circuit arrangement comprising a high-voltage power transistor, drive means for supplying a pulse-shaped switching signal to the base electrode thereof, a voltage supply source and a load impedance connected to the collector electrode of the high-voltage power transistor and to the voltage supply source, the collector current of the high-voltage power transistor, driven to the saturation state, supplied by the voltage supply source, being interruptable under the influence of the pulse-shaped switching signal applied thereto, and the drive means comprising an additional transistor, the emitter electrode of which is connected to the base electrode of the high-voltage power transistor and the collector electrode of the additional transistor is connected to the collector electrode of the high-voltage power transistor, wherein the drive means further comprises two current paths, namely a first current path comprising a switched-mode current source coupled to the base electrode of the additional transistor for making and maintaining the high-voltage power transistor conductive, and a second current path which comprises an inductance, a substantially constant-voltage source and a switch and which is included between the emitter and the base electrode of the high-voltage power transistor for blocking this transistor, the switched current flowing during operation while the switch is cut off and not flowing while the switch is conducting.