Method of producing silicon carbide powder
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsKatsutoshi Komeya, Hiroshi Inoue, Haruo Kudo, Hiroshi Endo
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Abstract
A method of producing a silicon carbide powder consisting of fine particles of uniform shape and size, comprising baking at 1,350.degree. to 1,850.degree. C. under a non-oxidizing atmosphere a powdery mixture consisting of 1 part by weight of silica powder or a compound forming silica powder at high temperatures, carbon powder or a compound forming carbon powder at high temperatures, and silicon carbide or a substance forming silicon carbide at high temperatures, the amounts of the silica powder-forming compounds, the carbon powder-forming compounds and the silicon carbide powder-forming substance being determined such that the amounts of the formed powders are equal to those specified above.
Claims5
A method of producing a silicon carbide powder, comprising, forming a powerdery mixture consisting of 1 part by weight of silica powder or a compound forming silica powder at the baking temperature employed, 0.5 to 4 parts by weight of carbon powder or a compound forming carbon powder at said baking temperature, and 0.05 to 1 part by weight of silicon carbide powder, the amounts of the silica powder-forming compound, and the carbon powder-forming compound being such that the amounts of the formed silica and carbon powders are equal to those specified above and baking said mixture at 1350.degree. C. to 1850.degree. C. under a non-oxidizing atmosphere selected from the group consisting of carbon monoxide, argon and hydrogen to produce a silicon carbide powder consisting of fine particles of uniform size and shape.
A method of producing a silicon carbide powder, comprising forming a powdery mixture consisting of 1 part by weight of silica powder or a compound forming silica powder at the baking temperature employed, 0.5 to 4 parts by weight of carbon powder or a compound forming carbon powder at said baking temperature, and 0.05 to 1 part by weight of silicon carbide powder, the amounts of the silica powder-forming compound, and the carbon powder-forming compound being such that the amounts of the formed silica and carbon powders are equal to those specified above and baking said mixture at a temperature exceeding 1,550.degree. C. under a non-oxidizing atmosphere selected from the group consisting of nitrogen and ammonia to produce a silicon carbide powder consisting of fine particles of uniform size and shape.
Dependencies are inferred from the claim text.