Bubble memory process using an aluminum plus water chemical reaction

Abstract

Disclosed is a process for fabricating magnetic bubble memory chips from a magnetic film having an insulating layer on one surface thereof. The process involves forming an aluminous layer of a first substantially uniform thickness on the insulating layer. Subsequently, a layer of water insoluble material is formed on the aluminous layer, and a mask for patterning control conductors for the memory is formed on the water insoluble layer. Later, all regions of the water insoluble layer that are not covered by the mask are removed, and all regions of the aluminous layer that are not covered by the mask are thinned to a second substantially uniform thickness. The thinned aluminous regions are converted to Al.sub.2 O.sub.3 by a chemical reaction with water; while the remaining regions of the aluminous layer remains unchanged. This reaction forms a plurality of patterned control conductors of the first thickness with Al.sub.2 O.sub.3 regions also being of the first thickness lying therebetween.

Dependencies are inferred from the claim text.