Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
AssigneeRCA Corporation
InventorDavid E. Carlson
Life of this patent
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Abstract
The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.
Claims15
A method of forming an N-type layer or an undoped hydrogenated amorphous silicon layer having increased dark conductivity and photoconductivity by the deposition of said layer in an AC or DC proximity glow discharge, said method comprising:
- placing a substrate in a proximity glow discharge apparatus;
- reducing the pressure to from about 0.3 to about 1 Torr;
- heating the substrate to from about 150.degree. to about 400.degree. C.;
- introducing a gaseous mixture containing from about 10 to about 90 percent by volume of argon and from about 90 to about 10 percent by volume of silane;
- and
- applying a potential across the electrodes.
In a solar cell having regions of undoped and N-type conductivity hydrogenated amorphous silicon fabricated in an AC or DC proximity glow discharge, the improvement which comprises fabricating said regions on a substrate in a glow discharge atmosphere incorporating argon in an amount from about 10 to about 90 percent by volume of the glow discharge atmosphere, and silane in an amount of from about 90 to about 10 percent by volume of the glow discharge atmosphere at a pressure of from about 0.3 to about 1 Torr, with a substrate temperature of from about 150.degree. C. to about 400.degree. C.
Dependencies are inferred from the claim text.