Method for making a semiconductor device
AssigneeSolarex Corporation
InventorJoseph Lindmayer
Life of this patent
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Abstract
A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped with an impurity of one conductivity type. A layer of a metal-containing compositions such as aluminum, is placed on one of the major surfaces of the wafer, and the wafer is then heated in the presence of an impurity of the opposite conductivity type to a temperature such that a high-low junction is formed by the metal at one major surface while the impurity of the opposite conductivity type diffuses or penetrates the other major surface to form a p-n junction thereat.
Claims9
A method of making a semiconductor device, comprising providing a wafer of host material, said wafer having two major surfaces and being doped with an impurity of one conductivity type, contacting one of said major surfaces with a layer of a metal-containing composition without alloying or sintering, and then heating said wafer in the presence of an impurity of a second conductivity type to a temperature at which, at least said metal of said metal-containing composition diffuses into and thereby alloys with or sinters to said one major surface to form a high-low junction thereat, while said second conductivity type impurity substantially concurrently forms a p-n junction at the other of said major surfaces.
A method as claimed in claim 6, in which said wafer is heated for a period of about 10 to 15 minutes.
Dependencies are inferred from the claim text.