Short channel MOS devices and the method of manufacturing same

In an improved semiconductor device having a body of semiconductor material of a first conductivity type;

• first and second regions of an opposite conductivity type sharing a common boundary surface on the body of semiconductor material;
• a channel region of the first conductivity type, intermediate the first and second regions and sharing the common boundary surface;
• a layer of gate insulator positioned over the channel region;
• and a layer of conductive material positioned solely over the channel region on the layer of gate insulator, the layer of conductive material and gate insulator defining a gate member;
• the improvement comprising;
• discrete ohmic connections to the gate member, the first region and the second region;
• the first and second opposite conductivity regions having the same type of conductivity modifiers therein;
• and
• the first opposite conductivity region having a concentration of conductivity modifiers therein about two orders of magnitude higher than the second opposite conductivity type region.