Readout scheme of a matrix type thin-film EL display panel
AssigneeSharp Kabushiki Kaisha
InventorsMasahiro Ise, Kenzo Inazaki, Katsuyuki Machino, Chuji Suzuki
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Abstract
Between adjacent matrix type electrodes in a thin-film EL display panel, one of which is transparent, there is disposed an EL layer sandwiched by a pair of dielectric layers, which manifests a hysteresis curve when plotted with respect to the applied voltage vs light intensity characteristics. The thin-film EL display panel is further provided with at least one reference electrode. In reading out the memory state of the display panel, current is derived which has an amplitude equal to the difference between the current drawn through the reference electrode and the readout current.
Claims5
A display device having a plurality of picture elements comprising:
- a thin-film EL display panel comprising an EL layer sandwiched by a pair of dielectric layers said EL display panel manifesting a hysteresis curve in the applied voltage vs brightness characteristics, and a matrix electrode array sandwiching said pair of dielectric layers for matrix driving said EL display panel;
- reference electrode means disposed on said thin-film EL display panel;
- and
- means for deriving current having an amplitude equal to a difference between the current through said reference electrode and a readout current when reading out the memory state of said display panel.
A display device comprising:
- a thin-film EL display panel comprising an EL layer sandwiched by a pair of dielectric layers which manifests a hysteresis curve in the applied voltage vs brightness characteristics, and matrix electrode array means sandwiching said pair of dielectric layers for matrix driving sald EL display panel;
- a plurality of transistors respectively connected between said matrix electrode array means of said EL display panel and a ground potential;
- first circuit means for supplying all of said transistors with a readout signal and for turning on said transistors;
- an analog multiplexer means for selecting said transistors;
- and
- second circuit means for turning off said transistors via said analog multiplexer during the readout mode and for turning on said transistors during the write and erase modes.
Dependencies are inferred from the claim text.