Metallic modified material of intermetallic compound and a process for the production of the same
OwnerShigeru Minomurainventor
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Abstract
The present invention is concerned with a new metallic modified material of intermetallic compound, which has the same chemical composition as an intermetallic compound semi-conductor with a zincblende-type or wurtzite-type crystalline structure and further has a rocksalt-type crystalline structure and which is stable at room temperature under atmospheric pressure to a high pressure.
Claims6
A process for the production of a metallic modified material of InSb or alloys thereof, which comprises providing a target consisting of an intermetallic compound semiconductor comprising In and Sb, said target having a zincblende-type or wurtzite-type crystalline structure, and sputtering said target to deposit a metallic modified material of InSb or alloys thereof with a rocksalt-type crystalline structure and the same chemical composition as the target on a substrate by tetrode sputtering with an anode voltage of at least around 60 V.
Dependencies are inferred from the claim text.