Method of producing light emitting semiconductor display
OwnerJustin H. Wickensinventor
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Abstract
A method is provided for mass production of a monolithic light emitting semiconductor display utilizing light emitting semiconductor devices formed in a monocrystalline silicon wafer and a covering of silicon dioxide formed into lens structures for controlling the light emitted by the semiconductor devices.
Claims10
In the process of fabricating an electrooptical device by means of the epitaxial growth of a silicon wafer using a series of conventional oxidizing, photomasking, etching, diffusion and metallizing steps, with intermediate oxidizing steps therebetween to form a thin transparent protective layer of silicon dioxide, the final oxidizing step forming a silicon dioxide layer having a predetermined thickness capable of containing a lens structure, and removing intermittent portions of the silicon layer to a depth less than said predetermined thickness to form a totally transparent Fresnel lens thereby providing a predetermined light pattern.
A monolithic method of manufacturing a light emitting display comprising the steps of:
- fabricating a semiconductor device of monocrystalline material by the conventional production method steps of repeated oxidation, photomasking, etching, and doping wherein
- said oxidation steps form a built up layer of a protective silicon dioxide on the device after the other method steps and
- a final oxidation step forms a silicon dioxide layer having a predetermined thickness capable of containing a lens structure;
- forming a totally trasparent lens structure solely of and in the upper surface of said final silicon dioxide layer around said device by removing intermittent portions of said upper surface to a depth less than said predetermined thickness to provide a predetermined light pattern.
A monolithic method of manufacturing a light emitting display array comprising the steps of:
- fabricating a monocrystalline silicon wafer structure including an n-doped silicon substrate layer;
- fabricating a plurality of spaced semiconductor devices simultaneously in said wafer by means of a series of oxidizing, diffusion, masking etching, and metallization steps;
- said oxidation steps form a built up protective layer of a protective silicon dioxide on the devices after the other method steps and the
- final oxidation step forms a silicon dioxide layer having a predetermined thickness capable of containing a lens structure for each of said semiconductor devices;
- etching a lens structure to a depth less than said predetermined thickness in the top surface of said final silicon dioxide layer around each of said semiconductor devices to provide a predetermined light pattern.
Dependencies are inferred from the claim text.