Multidrain metal-oxide-semiconductor field-effect
OwnerJean-Louis Lardy, Jacques Majosinventors
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Abstract
A metal-oxide-semiconductor field-effect device for constituting a single logic inverter stage. It includes a multidrain transistor operating in enhancement mode and a load transistor, both of monochannel metal-oxide-semiconductor structure. The inverter transistor comprises a single gate region and several drain regions. The single gate region and the single channel region of the inverter multidrain transistor are superimposed on both implantation planes separated by a thin insulating layer, entirely surround each drain region of the inverter multidrain transistor and are entirely surrounded by the single source region of the inverter multidrain transistor.
Claims6
A multidrain MOS field-effect device comprising:
- a semiconductor substrate of a determined conductivity type having a major face defining a first implantation plane;
- a source region included in said first implantation plane and being of the opposite conductivity type to said semiconductor substrate;
- a plurality of separated drain regions included in said first implantation plane and being of said opposite conductivity type;
- a single channel region included in said semiconductor substrate of said determined conductivity type, entirely surrounding each of said drain regions and being surrounded by said source region;
- a thin insulating layer above at least of said channel region;
- and
- a second implantation layer composed of polycristalline silicon and defining a single gate region which is above said thin insulating layer and said single channel region;
- said source region, said plurality of drain regions and said gate region forming a multidrain transistor which has its gate region entirely surrounding over said drain regions and being surrounded over said source region and which comprises a pluraltiy of separated drain electrodes in ohmic contact with said drain regions respectively.
A multidrain MOS field-effect device including an inverter multidrain transistor and a load transistor, at least the drain of said load transistor being connected to the gate of said inverter multidrain transistor, said inverter multidrain transistor comprising:
- a source region and a plurality of separated drain regions included in a first implanation plane defined by a major face of a semiconductor substrate of a determined conductivity type, said source region and said drain regions being of the opposite conductivity type of said semiconductor substrate;
- a single channel region included in said semiconductor substrate of said determined conductivity type, entirely surrounding each of said drain regions and being surrounded by said source region;
- a thin insulating layer above at least of said channel region;
- and
- a single gate region composed of polycristalline silicon and forming a second implantation layer which entirely surrounds over said drain region and is surrounded over said source region;
- said load transistor comprising;
- a source region included in said first implantation plane and being of said opposite semiconductor type;
- a drain region included in said first implantation plane, being of said opposite semiconductor type and being in ohmic contact with an extreme portion of said single gate region of said inverter multidrain transistor;
- and
- a gate region composed of polycristalline silicon and included in said second implantation layer.
Dependencies are inferred from the claim text.