Screenable contact structure and method for semiconductor devices
OwnerBernd Rossinventor
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Abstract
An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.
Claims12
A metal powder composition for deposition and firing upon a substrate, comprising
- a screenable metal powder,
- a binder,
- a vehicle, and
- a metal frit for use as a liquid medium to transport the metal powder in a liquid sintering process and thereby create a coherent metal structure.
A metal powder composition for deposition and firing upon a substrate, comprising
- a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
- a binder,
- a vehicle, and
- a metal frit.
A metal powder composition for deposition and firing upon a substrate, comprising
- a screenable powder of a metal having an electrical resistivity of 7.0 ohm-cm or less at 0.degree. C.,
- a binder,
- a vehicle, and
- a metal frit having a melting point approximately in the range of 200.degree. C. to 600.degree. C.
A metal powder composition for deposition and firing upon a substrate, comprising
- a screenable metal powder selected from the group consisting of copper, nickel, aluminum, silver, gold, and combinations and alloys thereof,
- a binder,
- a vehicle,
- a metal frit selected from the group consisting of lead, tin, zinc, cadmium, indium, bismuth, antimony, aluminum, and combinations and alloys thereof,
- a semiconductor powder,
- a dopant selected from the group consisting of N and P type dopants, and
- a fluxing agent.
Dependencies are inferred from the claim text.