Edge illuminated photodetector with optical fiber alignment
AssigneeBell Telephone Laboratories, Incorporated
InventorsJames C. North, David P. Schinke
Life of this patent
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Abstract
A silicon photodetector capable of long wavelength response which includes means for aligning an optical fiber for edge illumination. The detector is formed in a silicon body (11 and 12) with major surfaces lying in the (110) plane. A groove (23) is etched in the body adjacent the detector to produce sidewalls (24) and an end wall (25) lying in (111) planes. The sidewalls form a v-shaped groove with a depth precisely determined by the width of the groove so that an optical fiber (26) placed in the groove is vertically aligned with the detector. The end wall is perpendicular to the surface of the body so that light from the fiber is not refracted from the plane of the detector.
Claims9
A semiconductor device for detection of incident light comprising a body of silicon (11 and 12) with two major surfaces and means (22 and 29) formed in said body responsive to light which is incident thereon essentially parallel to said major surfaces characterized in that the major surfaces lie in the (110) plane and a portion of the semiconductor body defines a groove (23) adjacent to said light responsive means, said groove having sloping sidewalls (24) lying in (111) planes suitable for placing an optical fiber in the groove aligned with the area under said light responsive means.
A semiconductor device for detection of incident light comprising a body of silicon with two major surfaces and including a substrate (11) of one conductivity type and an epitaxial layer (12) of the same conductivity type but lower impurity concentration, a first region (16) of opposite conductivity type formed at the surface of said epitaxial layer, a second region (15) of said one conductivity type but higher impurity concentration than said epitaxial layer formed beneath said first region so as to form a p-n junction (22) which is responsive to carriers generated in said epitaxial layer in response to light incident thereon parallel to the major surface, and a guard ring (13) of opposite conductivity type surrounding said p-n junction CHARACTERIZED IN THAT the major surfaces lie in the (110) plane, a portion of the semiconductor body defines a groove (23) adjacent to one side of the p-n junction, said groove having sloping sidewalls (24) lying in (111) planes and an end wall (25) lying in a (111) plane perpendicular to the major surfaces, the width of the p-n junction is varied so as to be wider at distances farther from the groove, and an optical fiber is placed in said groove so that light from said fiber is incident on said epitaxial layer beneath the first and second regions essentially parallel to the major surfaces.
Dependencies are inferred from the claim text.