Selenium layer piezoelectric device
AssigneeThomson-CSF
InventorsEugene Dieulesaint, Daniel Royer, Richard Guedj
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Abstract
The invention relates to piezoelectric devices employing a piezoelectric layer deposited on a substrate devoid of piezoelectric properties at ambient temperature. The device in accordance with the invention is provided with a piezoelectric layer made from a mono-atomic crystalline material, namely selenium. The invention is applicable to the excitation of surface elastic waves along non-piezoelectric substrates, to the excitation of bulk elastic waves and to the detection of infrared radiations.
Claims13
A piezoelectric device comprising a substrate non-piezoelectric at ambient temperature, a deposit of piezoelectric material carried by said substrate, and electrode means located on at least one of the major faces of said deposit;
- said deposit comprising a layer of selenium in the crystalline state;
- said electrode means being disposed on the free side of said selenium deposit opposed to said substrate;
- said substrate being capable of propagating surface elastic waves, said electrode means cooperating with said deposit so as to form at least one electromechanical transducer radiating said surface elastic waves.
A device comprising a substrate non-piezoelectric at ambient temperature, a deposit of piezoelectric material carried by said substrate, and electrode means located on at least one of the major faces of said deposit;
- said deposit comprising a layer of selenium in the cristalline state said selenium being deposited on an Y cut substrate of tellurium.
A device comprising a substrate non-piezoelectric at ambient temperature, a deposit of piezoelectric material carried by said substrate, and electrode means located on at least one of the major faces of said deposit;
- said deposit comprising a layer of selenium in the cristalline state said selenium being deposited on a substrate of silicon.
Dependencies are inferred from the claim text.