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US 4,189,516 AGranted
Epitaxial crystalline aluminium nitride
AssigneeNational Research Development Corporation
InventorsPeter M. Dryburgh, Raymond R. Halstead
Life of this patent
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Abstract
Material suitable for a surface acoustic wave device comprises an epitaxial film of aluminum nitride on the surface of a substrate of single crystal aluminum oxide, said surface having the crystallographic orientation 1100.
Claims4
Material suitable for a surface acoustic wave device comprising an epitaxial film of aluminum nitride on the surface of a substrate of single crystal aluminum oxide, said surface having the crystallographic orientation 1100.
Dependencies are inferred from the claim text.