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US 4,187,126 AGranted
Growth-orientation of crystals by raster scanning electron beam
AssigneeConoco Inc.
InventorsFred J. Radd, Don H. Oertle, Charles N. McKinney
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Abstract
A method of grain-orienting the crystal structure of a layer of semiconductor material by application of a raster scanning electron beam to a layer of polycrystalline semiconductor material which has been previously formed on a substrate, such as by sputter-plasma film deposition. The method comprises electron beam lithography computer-applied to the crystal growth and orientation of a polycrystalline thin sheet of silicon or other semiconductor material.
Claims5
A method of producing a thin sheet of oriented crystal semiconductor material comprising:
- (a) forming a layer of semiconductor material on a substrate;
- (b) subjecting said layer to a vacuum of at least 10.sup.-6 torr;
- and
- (c) applying a raster scanning electron beam to at least a portion of said layer under said vacuum to melt said portion of said layer and subsequently cause said portion of said layer to assume an oriented crystalline structure.
1 more element
Dependencies are inferred from the claim text.