Substrate clamping technique in IC fabrication processes

Abstract

An electrostatic clamping technique for use in clamping substrates in various semiconductor fabrication processes is disclosed. One example takes the form of a substrate support plate which has deposited on its working face two layers of thermally conductive, electrically insulative RTV silicone, between which layers is located an interdigital type printed circuit capacitor energized by a DC source in the kilovolt range. Secured to the back surface of the support plate is a water cooled jacket with the entire assembly adapted for location in the incident ion beam and having good thermal dissipation properties. An alternate embodiment utilized an alumina support plate on which the capacitor of aluminum composition is deposited by vacuum evaporation; the exposed capacitor surface is rendered insulative by oxidation.

Dependencies are inferred from the claim text.