Method for providing a metal silicide layer on a substrate
AssigneeInternational Business Machines Corporation
InventorsBilly L. Crowder, Stanley Zirinsky
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Abstract
A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.
Claims23
A method for preparing metal silicide interconnections in an integrated circuit which comprises providing a layer of a metal silicide on a substrate wherein said metal is selected from the group consisting of molybdenum, tantalum, tungsten, rhodium, and mixtures thereof, by coevaporating said metal and silicon onto the desired substrate and then heat treating the coated substrate for a time sufficient for reacting deposited metal and deposited silicon to thereby obtain said metal silicide interconnections and wherein said interconnections are provided on the same side of the substrate as are electrically active devices.
Dependencies are inferred from the claim text.