High temperature amorphous semiconductor member and method of making the same

An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorhous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising, forming an amorphous semiconductor material including a composition of a plurality of elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix and a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron or carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.

The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron or carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.