Integrated logic circuit with a current source made as a field-effect transistor

An integrated inverter comprising:

• a first field-effect transistor operating in a switching mode and having a gate, a drain and a source;
• a second field-effect transistor having its conductivity complementary to that of said first field-effect transistor, operating as a current source and having a gate, a drain and a source;
• an input electrode coupled to the gate of said first transistor and to the drain of said second transistor;
• an output electrode coupled to the drain of said first transistor;
• a first power supply circuit electrode coupled to the source of said second transistor;
• and
• a second power supply circuit electrode, which is grounded and coupled to the gate of said second transistor and to the source of said first transistor;
• wherein
• said first transistor is made in the form of a planar field-effect structure with a pn junction, a vertical n(p)-channel and a source combined with an n(p)-substrate of the inverter;
• and wherein
• said current source is made in the form of a field-effect structure with a pn junction, a horizontal p(n)-channel, a drain region combined with the gate region of said first transistor and a source region combined with said substrate.

An integrated inverter comprising:

• a first field-effect transistor operating in a switching mode and having a gate, a drain and a source;
• a second field-effect transistor having its conductivity complementary to that of said first transistor, operating as a current source and having a gate, a drain and a source;
• an input electrode coupled to the gate of said first transistor and to the drain of said second transistor;
• an output electrode coupled to the drain of said first transistor;
• a first power supply circuit electrode coupled to the source of said second transistor;
• and
• a second power supply circuit electrode, which is grounded and coupled to the gate of said second transistor and to the source of said first transistor;
• wherein
• said first transistor is made as a field-effect planar structure with a pn junction and a vertical n(p)-channel formed on a p(n)-substrate;
• and wherein
• said current source is made as a field-effect structure with a pn junction, a vertical p(n)-channel and a drain region combined with the gate region of said first transistor, and with a source region combined with said substrate.