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US 4,160,988 AGranted
Integrated injection logic (I-squared L) with double-diffused type injector
AssigneeSignetics Corporation
InventorLewis K. Russell
Life of this patent
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AssigneeSignetics Corporation
InventorLewis K. Russell
Estimating the term…
A semiconductor structure, and method for fabrication, including a semiconductor body of one conductivity type having a major surface. A layer of opposite conductivity material is formed on said surface, said layer having an upper planar surface generally parallel to said major surface. Spaced first and second collector regions are carried by said layer. A third one conductivity region is formed in said layer spaced from said first and second region and extending to an exposed surface of said layer. A fourth region of opposite conductivity type is formed within said third region and extends to an exposed surface of said layer. The layer, third and forth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor. Additionally, the body, the layer and the first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors.
In a semiconductor structure, a semiconductor body of one conductivity type having a major surface, a layer of opposite conductivity formed on said major surface and having an upper planar surface generally parallel to said major surface, spaced first and second collector regions in rectifying contact with said layer and extending to said planar surface, said first and second collector regions spaced from said body, a third one conductivity region formed in said layer spaced from said first and second regions and extending to said planar surface of said layer, a fourth region of opposite conductivity type formed within said third region and extending to said planar surface of said layer, whereby said layer, said third and fourth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor, and said body, said layer and said first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors, lead means for connecting said regions to external circuitry, a one conductivity isolation ring which extends from said planar surface through said layer to contact said body and surround a portion of said layer to thereby define and isolate the semiconductor structure, said isolation ring having a V groove formed therein having downwardly and inwardly tapering walls with respect to said planar surface and wherein the apex of said V extends substantially to the body, and wherein the exposed walls of said V groove have a one conductivity region formed therein.
In a semiconductor structure, a semiconductor body of one conductivity type having a major surface, a layer of opposite conductivity formed on said major surface and having an upper planar surface, spaced first and second collector regions in rectifying contact with said layer and extending to said planar surface, said first and second collector regions spaced from said body, a third one conductivity region formed in said layer spaced from said first and second regions and extending to said planar surface of said layer, a fourth region of opposite conductivity type formed within said third region and extending to said planar surface of said layer, whereby said layer, said third and said fourth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor, and said body, said layer and said first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors, lead means for connecting said regions to external circuitry together with a one conductivity isolating ring which extends from said planar surface through said layer to contact said body and surround a portion of said layer to thereby define and isolate the semiconductor structure and wherein said third region and said isolation ring are interconnected by structural means integrated with said layer for providing a reduced supply voltage between said third region and said isolation ring, said structural means constituting the sole connection to said third region of the source transistor.
In a semiconductor structure, a semiconductor body of one conductivity type having a major surface, a layer of opposite conductivity formed on said major surface and having an upper planar surface, spaced first and second collector regions in rectifying contact with said layer and extending to said planar surface, said first and second collector regions spaced from said body, a third one conductivity region formed in said layer spaced from said first and second regions and extending to said planar surface of said layer, a fourth region of opposite conductivity type formed within said third region and extending to said planar surface of said layer, whereby said layer, said third and said fourth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor, and said body, said layer and said first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors, lead means for connecting said regions to external circuitry together with a one conductivity isolation ring which extends from said planar surface through said layer to contact said substrate and surround a portion of said layer to thereby define and isolate the semiconductor structure and wherein said third region and said isolation ring are interconnected by structural means integrated with said layer for providing a reduced supply voltage between said third region and said isolation ring, said structural means including a necked down portion of said third region extending to connect said third region to said isolation ring to thereby define an additional resistive region formed in said layer.
In a semiconductor structure, a semiconductor body of one conductivity type having a major surface, a layer of opposite conductivity formed on said surface and having an upper planar surface generally parallel to said major surface, spaced first and second collector regions in rectifying contact with said layer and extending to said upper planar surface, said first and second collector regions spaced from said body, a third one conductivity region formed in said layer spaced from said first and second regions and extending to said planar surface of said layer, a fourth region of opposite conductivity type formed within said third region and extending to said planar surface of said layer, whereby said layer, said third and said fourth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor, and said body, said layer and said first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors, lead means for connecting said regions to external circuitry, and wherein a V groove extends from said planar surface substantially through said layer to said body, said groove having downwardly, inwardly tapering walls with respect to said planar surface, and wherein said third region is a one conductivity region formed in the exposed walls of said groove and wherein said fourth region is an opposite conductivity region formed within said third region and extending to an exposed wall of said groove.
In a semiconductor structure, a semiconductor body having a planar surface and including a body portion of one conductivity type, a first region of opposite conductivity type formed in said body and extending to said surface, spaced second and third collector regions in rectifying contact with said first region and extending to said surface, said second and third collector regions spaced from said body portion, a fourth region of one conductivity type formed within said first region, said fourth region being spaced from said second and third regions and extending to said planar surface, and a fifth region of opposite conductivity type formed entirely within said fourth region and extending to said surface, lead means for coupling said regions and said body portion to external circuitry and wherein said fourth region and said body portion are interconnected by structural means integrated with said semiconductor body for providing a reduced supply voltage between said fourth region and said body portion, said structural means constituting the sole connection to said fourth region.
In a semiconductor structure, a semiconductor body having a planar surface and including a body portion of one conductivity type, a first region of opposite conductivity type formed in said body and extending to said surface, spaced second and third collector regions in rectifying contact with said first region and extending to said surface, said second and third collector regions spaced from said body portion, a fourth region of one conductivity type formed within said first region, said fourth region being spaced from said second and third regions and extending to said planar surface, and a fifth region of opposite conductivity type formed entirely within said fourth region and extending to said surface, lead means for coupling said regions and said body portion to external circuitry and wherein said fourth region and said body portion are interconnected by structural means integrated with said semiconductor body for providing a reduced supply voltage between said fourth region and said body portion, said structural means including a necked down portion of said fourth region extending to said body to thereby define an additional resistive region formed in said body.
In a semiconductor structure, a semiconductor body having a planar surface comprising a body portion of one conductivity type, a first region of opposite conductivity type formed in said body and extending to said surface, spaced second and third collector regions in rectifying contact with said first region and extending to said surface, said second and third collector regions being spaced from said body portion, source means for providing current connected to said first region, said source means comprising a source transistor which has a base region of said one conductivity type and emitter and collector regions of the opposite conductivity type, said source transistor regions extending in the semiconductor body, said collector region of the source transistor extending to said surface and being connected to said first region, lead means for coupling said regions and said body portion to other circuitry and wherein said source transistor base region and said body portion are interconnected by structural means integrated with the semiconductor body for providing a voltage difference between said base region and said body portion, said structural means constituting the sole connection to the base region of said source transistor.
Dependencies are inferred from the claim text.